PD91753A
IRG4IBC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• 2.5kV, 60s insulat...
PD91753A
IRG4IBC30UD
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Tighter parameter distribution Industry standard Isolated TO-220 FullpakTM outline
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
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Benefits
Simplified assembly Highest efficiency and power density HEXFREDTM antiparallel Diode minimizes switching losses and EMI
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM Visol VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to CaseU Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 17 8.9 92 92 8.5 92 2500 ± 20 45 18 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm)
Units
V
A
V W
°C
Thermal Resistance
Parameter
RθJC RθJC RθJA Wt Junction-to-Case - IGB...