Document
COM150A COM350A COM250A COM450A
(COTS) COMMERCIAL OFF-THE-SHELF POWER MOSFET IN A TO-254AA PA C K A G E
100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package
FEATURES
• • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Standard Off-The-Shelf
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS @
PART NUMBER COM150A COM250A COM350A COM450A
25° C
VD S 100 V 200 V 400 V 500 V
R DS(on) .070 .100 .32 .42
I D 25 A 20 A 12 A 10 A
3 . 1
S C H E M ATIC
POWER RATING
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3 . 1- 1
3 . 1
COM150A - COM450A
ELECTRICAL CHARACTERISTICS:
STATIC
Parameter B VDSS V GS(th) I GSSF I GSSR I DSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current I D(on) V DS(on) R DS(on) R DS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 35 1 . 1 0 . 1 0 . 2
( TC = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N COM250A
Parameter B VD S S V GS(th) I GSSF I GSSR I DSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current I D(on) V DS(on) R DS(on) R DS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 30 0 . 1 0 . 2
( TC = 25°C unless otherwise noted)
P/N COM150A
Min. Typ. Max. Units Test Conditions 100 2 . 0 4 . 0 100 -1 0 0 0.25 1 . 0 V V nA nA mA mA A 1 . 3 V VG S = 0 , I D = 250 mA V D S = VG S, ID = 250 mA V G S = +20 V V G S = -20 V V D S = Max. Rat., VG S = 0 V D S = 0.8 Max. Rat., VG S = 0 , TC = 125° C VD S 2 VDS(on),VG S = 10 V
Min. Typ. Max. Units Test Conditions 200 2 . 0 4 . 0 100 -100 0.25 1 . 0 V V nA nA mA mA A 1.36 1.60 .085 .100 0.15 0.18 V VG S = 0 , I D = 250 mA V D S = VG S, ID = 250 mA V G S = + 20 V VG S = - 2 0V V D S = Max. Rat., VG S = 0 V D S = 0.8 Max. Rat., VG S = 0 , TC = 125° C VD S 2 VDS(on),VG S = 10 V
VG S = 1 0V , ID = 20 A VG S = 1 0V , ID = 20 A VG S = 1 0V , ID = 20 A, TC = 125 C
VG S = 1 0V , ID = 16 A VG S = 1 0V , ID = 16 A VG S = 1 0V , ID = 16 A, TC = 125 C
0.55 0.07 1 . 0 0.12
gf s C iss C oss C rss t d(on) t r t d ( o f f ) t f
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
9 . 0 2700 1300 470 28 45 100 50
S( W ) VD S pF pF pF ns ns ns ns
2 VDS(on), ID = 20 A
gf s C iss C oss C rss t d(on) t r t d ( o f f ) t f
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
10.0 2400 600 250 25 60 85 38
S( W ) VD S pF pF pF ns ns ns ns
VG S = 0 V D S = 25 V f = 1 MHz VD D = 3 0V , ID @ 20 A Rg = 5 . 0 W ,VG = 10V
(MOSFET switching times are essentially independent of operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I S I SM VS D t r Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 400
Modified MOSPOWER
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I S I SM
S
-4 0 -1 6 0 -2 . 5
A
symbol showing t h ei n t e g r a lP N
G
Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 350
-3 0 -1 2 0 -2
A
J u n c t i o nr e c t i f i e r.
V ns
TC = 25 C ,IS = -40 A, VG S = 0 ,IF =IS, TJ = 150 C d lF/ds = 100 A/ms
VS D t r
1 Pulse Test: Pulse Width
300msec, Duty Cycle
2%.
1 Pulse Test: Pulse Width
300msec, Duty Cycle
2%.
( W) A A V ns
( W)
3 . 1- 2
DYNAMIC
DYNAMIC
2 VDS(on), ID = 16 A VG S = 0 V D S = 25 V f = 1 MHz VD D = 7 5V , ID @ 16 A Rg = 5 . 0 W, VG S = 10V
(MOSFET switching times are essentially independent of operating temperature.)
Modified MOSPOWER symbol showing t h ei n t e g r a lP N J u n c t i o nr e c t i f i e r.
G
D
S
TC = 25 C ,IS = -30 A, VG S = 0 ,IF =IS, TJ = 150 C d lF/ds = 100 A/ms
ELECTRICAL CHARACTERISTICS:
STATIC
Parameter B VDSS V GS(th) I GSSF I GSSR I DSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current I D(on) V DS(on) R DS(on) R DS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 15 2 . 0 0.25 0 . 1 0 . 2
( TC = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N COM450A
Parameter B VD S.