MX28F128J3

ADVANCED INFORMATION MX28F320J3/640J3/128J3 32M/64M/128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY FEATURES 2.7V to 3.6V operation voltage Block Structure - 32 x 128Kbyte Erase Blocks (32M) - 64 x 128Kbyte Erase Blocks (64M) - 128 x 128Kbyte Erase Blocks (128M) Fast random / page mode access time - 120/25 ns Read Access Time (32M) - 120/25 ns Read Access Time (64M) - 150/25 ns Read Access Time (128M) 128-bit Protection Register - 64-bit Unique Device Identifier - 64-bit User Programmable OTP Cells 32-Byte Write Buffer - 6 us/byte Effective Programming Time Enhanced Data Protection Features Absolute Protection with VPEN = GND - Flexible Block Locking - Block Erase/Program Lockout during Power Transitions Software Feature Support Common Flash Interface (CFI) - Flash device parameters stored on the device and provide the host system to access. Automation Suspend Options - Block Erase Suspend to Read - Block Erase Suspend to Program - Program Suspend to Read Hardware Feature(Not for 48-TSOP/48-RTSOP) A0 pin - Select low byte address when device is in byte mode. Not used in word mode. STS pin - Indicates the status of the internal state machine. VPEN pin - For Erase /Program/ Block Lock enable. VCCQ Pin - The output buffer power supply, control the device 's output voltage. Performance Low power dissipation - typical 15mA active current for page mode read - 80uA/(max.) standby current - Deep power-down current: 5uA High Performance - Block erase tim...