K7A201800B

K7A203600B K7A203200B K7A201800B Document Title Preliminary 64Kx36/x32 & 128Kx18 Synchronous SRAM 64Kx36 & 64Kx32 & 128Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No 0.0 0.1 History 1. Initial draft 1. Add tCYC 250,225, 200MHz bin. Draft Date Dec. 10. 2001 Jan . 17. 2002 Remark Preliminary Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any queswww.DataSheet4U.com tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. www.DataSheet4U.com -1- Jan 2002 Rev 0.1 K7A203600B K7A203200B K7A201800B Preliminary 64Kx36/x32 & 128Kx18 Synchronous SRAM 2Mb SB/SPB Synchronous SRAM Ordering Information Org. Part Number Mode VDD Speed FT ; Access Time(ns) Pipelined ; Cycle Time(MHz) 6.5/7.5/8.0 ns 250/225/200/167/138 MHz 6.5/7.5/8.0 ns 250/225/200/167/138 MHz 6.5/7.5/8.0 ns 250/225/200/167/138 MHz Q (100TQFP) C (Commercial Temperature Range) I: (Industrial Temperature PKG Temp 128Kx18 K7B201825B-QC(I)65/75/80 K7A201800B-QC(I)25/22/20/16/14 SB SPB(2E1D) SB SPB(2E1D) SB SPB(2E1D) 3.3 3.3 3.3 3.3 3.3 3.3 64Kx32 K7B203225B-QC(I)65/75/80 K7A203200B-QC(I)25/22/20/16/14 64Kx36 K7B203625B-QC(I)65/75/80 K7A203600B-QC(I)25/22/20/16/14 -2- Jan 2002 Rev 0.1 K7A203600B K7A203200B K7A201800B...