SI7214DN

Si7214DN Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 6.4 5.9 rDS(on) (W) 0.04 @ VGS = 10 V 0.047 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 100% Rg Tested D Optimized for High Efficiency Applications RoHS COMPLIANT APPLICATIONS D Synchronous Rectification PowerPAKr 1212-8 D1 3.30 mm S1 D2 1 2 G1 S2 3.30 mm 3 4 G2 G1 G2 D1 8 7 D1 D2 6 5 D2 S1 N-Channel MOSFET S2 N-Channel MOSFET Bottom View Ordering Information: Si7214DN-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 6.4 4.6 20 2.2 2.6 1.4 Steady State Unit V 4.6 3.3 A A W 1.1 1.3 0.69 −55 to 150 260 _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 38 77 4.3 Maximum 48 94 5.4 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. www.DataSheet4U.com b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) a...