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STP3NA90

ST Microelectronics

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP3NA90 STP3NA90FI s s...


ST Microelectronics

STP3NA90

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STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP3NA90 STP3NA90FI s s s s s s s V DSS 900 V 900 V R DS(on) < 5.3 Ω < 5.3 Ω ID 3A 1.9 A TYPICAL RDS(on) = 4.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( ) P tot V ISO T stg Tj Parameter STP3NA90 Drain-Source Voltage (V gs = 0) Drain-Gate Voltage (R gs = 20 K Ω ) Gate-Source Voltage Drain-Current (continuous) at T c = 25 C Drain-Current (continuous) at T c = 100 o C Drain-Current (Pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max Operating Junction Temperature o o Value STP3NA90FI 900 900 ± 30 3 2 12 100 1.25 -65 to 150 150 1.9 1.2 12 40 0.32 2000 Unit V V V A A A W W/ o C V o o C C ()Pulse width limited by safe operating area March 1996 1/6 STP3NA90/FI THERMAL DATA TO220 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 0.8 62.5 0.5 300 ISOWATT220 3.12 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum...




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