DatasheetsPDF.com

TC582562AXB

Part Number	TC582562AXB
Manufacturer	Toshiba
Description	CMOS NAND EPROM
Published	Mar 24, 2006
Detailed Description	TC582562AXB TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 256-MBIT (32M × 8 BITS) CMOS NAND E PR...
Datasheet	TC582562AXB PDF File

Overview

TC582562AXB TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 256-MBIT (32M × 8 BITS) CMOS NAND E PROM DESCRIPTION The TC582562A is a single 3.
3 V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks.
The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.
The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages).
The TC582562A is a serial-type memory device which utilizes the I/O pins for both address and data input/output...

Similar Datasheet

TC582562AXB CMOS NAND EPROM - Toshiba

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)