NAND04G-B

NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities SUPPLY VOLTAGE – 1.8V device: VDD = 1.7 to 1.95V – 3.0V device: VDD = 2.7 to 3.6V PAGE SIZE – x8 device: (2048 + 64 spare) Bytes – x16 device: (1024 + 32 spare) Words BLOCK SIZE – x8 device: (128K + 4K spare) Bytes – x16 device: (64K + 2K spare) Words PAGE READ / PROGRAM – Random access: 25µs (max) – Sequential access: 50ns (min) – Page program time: 300µs (typ) COPY BACK PROGRAM MODE – Fast page copy without external buffering CACHE PROGRAM AND CACHE READ MODES – Internal Cache Register to improve the program and read throughputs FAST BLOCK ERASE – Block erase time: 2ms (typ) STATUS REGISTER ELECTRONIC SIGNATURE CHIP ENABLE ‘DON’T CARE’ – for simple interface with microcontroller SERIAL NUMBER OPTION Figure 1. Packages TSOP48 12 x 20mm FBGA VFBGA63 9.5 x 12 x 1mm TFBGA63 9.5 x 12 x 1.2mm ■ ■ ■ ■ DATA PROTECTION – Hardware and Software Block Locking – Hardware Program/Erase locked during Power transitions DATA INTEGRITY – 100,000 Program/Erase cycles – 10 years Data Retention RoHS COMPLIANCE – Lead-Free Components are Compliant...