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MRF5812

Advanced Power Technology

Bipolar Junction Transistor


Description
MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units DESCRIPTION: Designed for high current, low power, low nois...



Advanced Power Technology

MRF5812

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