P-Channel Enhancement Mode MOSFET
S T M6375
S amHop Microelectronics C orp.
S ep.21,2004
P -C hannel E nhancement Mode MOS FE T
P R ODUC T S UMMAR Y
V D...
Description
S T M6375
S amHop Microelectronics C orp.
S ep.21,2004
P -C hannel E nhancement Mode MOS FE T
P R ODUC T S UMMAR Y
V DS S
-20V
F E AT UR E S
( m W ) Max
ID
-8A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
20 @ V G S = -4.5V 28 @ V G S = -2.5V
R ugged and reliable. S urface Mount P ackage.
D
8
D
7
D
6
D
5
S O-8 1
1 2 3 4
S
S
S
G
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit - 20 10 -8 - 32 -1.7 2.5 -55 to 150 Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA 50 C /W
1
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S T M6375
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS
c
S ymbol
Condition
V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID = -250uA V GS =-4.5V,ID= -8A V GS = -2.5V,ID =-6A V DS = -5V, V GS = -4.5V V DS = -5V, ID = - 5A
Min Typ C Max Unit
-20 -1 V uA 100 nA -0.6 -0.8 14 19 -20 20 1932 550 115 -1.5 V
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esista...
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