SST34HF3223B

32 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory SST34HF3223B / SST34HF3243B SST34HF3223B / SST24HF3243B32 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemories Preliminary Information FEATURES: Flash Organization: Two 1M x16 Quad-Bank Architecture for Concurrent Read-While-Write Operation – 12 Mbit + 4 Mbit + 12 Mbit + 4 Mbit SRAM Organization: – 2 Mbit: 256K x8 or 128K x16 – 4 Mbit: 512K x8 or 256K x16 Single 2.7-3.3V Read-While-Write Operations Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Low Power Consumption: – Active Current: 35 mA (typical) – Standby Current: 25 µA (typical) Sector-Erase Capability – Uniform 1 KWord sectors Block-Erase Capability – Uniform 32 KWord blocks Read Access Time – Flash: 70 and 90 ns – SRAM: 70 and 90 ns Latched Address and Data Fast Erase and Word-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Word-Program Time: 14 µs (typical) – Chip Rewrite Time: 30 seconds (typical) Automatic Write Timing – Internal VPP Generation End-of-Write Detection – Toggle Bit – Data# Polling CMOS I/O Compatibility JEDEC Standard Command Set Packages Available – 56-ball LFBGA (10mm x 12mm x 1.4mm) PRODUCT DESCRIPTION The SST34HF3223B/3243B ComboMemory devices integrate four CMOS flash memory banks with a 256K x8 / 128K x16 or 512K x8 / 256K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP...