SST34HF1681D

16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory SST34HF1601C / SST34HF1621C / SST34HF1641C SST34HF1641D / SST34HF1681D / SST34HF1621S / SST34HF1641S SST34HF168116Mb CSF (x8/x16) + 2/4/8 Mb SRAM (x16) MCP ComboMemory Advance Information FEATURES: Flash Organization: 1M x16 or 2M x8 Dual-Bank Architecture for Concurrent Read/Write Operation – 16 Mbit: 12 Mbit + 4 Mbit (P)SRAM Organization: – 2 Mbit: 128K x16 or 256K x8 – 4 Mbit: 256K x16 or 512K x8 – 8 Mbit: 512K x16 or 1024K x8 Single 2.7-3.3V Read and Write Operations Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Low Power Consumption: – Active Current: 25 mA (typical) – Standby Current: 20 µA (typical) Hardware Sector Protection (WP#) – Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high Hardware Reset Pin (RST#) – Resets the internal state machine to reading data array Byte Selection for Flash (CIOF pin) – Selects 8-bit or 16-bit mode Sector-Erase Capability – Uniform 2 KWord sectors Block-Erase Capability – Uniform 32 KWord blocks Read Access Time – Flash: 70 ns – (P)SRAM: 70 ns Erase-Suspend / Erase-Resume Capabilities Security ID Feature – SST: 128 bits – User: 128 bits Latched Address and Data Fast Erase and Word-/Byte-Program (typical): – Sector-Erase Time: 18 ms – Block-Erase Time: 18 ms – Chip-Erase Time: 35 ms – Word-Program Time: 7 µs Automatic Write Timin...