Document
PD - 9.892A
IRFZ34S/L
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175°C Operating Temperature Fast Switching
D
VDSS = 60V RDS(on) = 0.050Ω
G
ID = 30A
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D 2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ34L) is available for lowprofile applications.
S
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
30 21 120 3.7 88 0.59 ± 20 200 4.5 -55 to + 175 300 (1.6mm from case )
Units
A W W W/°C V mJ V/ns °C °C
Thermal Resistance
Parameter
Rθ JC Rθ JA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
––– –––
Max.
1.7 40
Units
°C/W 8/25/97
www.DataSheet4U.com
IRFZ34S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 60 ––– ––– 2.0 9.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.065 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13 100 29 52 7.5 1200 600 100
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID =1mA
0.05 Ω VGS =10V, ID = 18A 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 18A
25 VDS = 60V, VGS = 0V µA 250 VDS = 48V, VGS = 0V, TJ = 150°C 100 V GS = 20V nA -100 VGS = -20V 46 ID = 30A 11 nC VDS = 48V 22 VGS = 10V,.