MPS2907

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 PNP SILICON PLANAR EPITAXIAL TRANSISTORS MPS2907 MPS2907A TO-92 Plastic Package General Purpose Transistors ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL MPS2907 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case VCEO VCBO VEBO IC PD PD Tj, Tstg 40 60 5 600 625 5 1.5 12 -55 to +150 MPS2907A 60 75 UNITS V V V mA mW mW/ºC W mW/ºC ºC Rth(j-a) Rth(j-c) 200 83.3 ºC/W ºC/W Continental Device India Limited Data Sheet Page 1 of 5 PNP SILICON PLANAR EPITAXIAL TRANSISTORS MPS2907 MPS2907A TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base Voltage Emitter-Base Voltage Collector-Cut off Current BVCEO * BVCBO BVEBO ICBO VCB=50V, IE = 0 VCB=50V, IE = 0, Collector-Cut off Current Collector-Cut off Current Emitter Cut off Current Base Cut off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain hFE VCE=10V,IC=0.1mA VCE=10V,IC=1mA VCE=10V,IC=10mA VCE=10V*,IC=150mA VCE=10V*,IC=500mA ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DYN...