MT55L256L36F

8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM 8Mb ZBT® SRAM FEATURES High frequency and 100 percent bus utilization Fast cycle times: 10ns, 11ns and 12ns Single +3.3V ±5% power supply (VDD) Separate +3.3V or +2.5V isolated output buffer supply (VDDQ) Advanced control logic for minimum control signal interface Individual BYTE WRITE controls may be tied LOW Single R/W# (read/write) control pin CKE# pin to enable clock and suspend operations Three chip enables for simple depth expansion Clock-controlled and registered addresses, data I/Os and control signals Internally self-timed, fully coherent WRITE Internally self-timed, registered outputs to eliminate the need to control OE# SNOOZE MODE for reduced-power standby Common data inputs and data outputs Linear or Interleaved Burst Modes Burst feature (optional) Pin/function compatibility with 2Mb, 4Mb, and 18Mb ZBT SRAM 100-pin TQFP 165-pin FBGA Automatic power-down MT55L512L18F, MT55L512V18F, MT55L256L32F, MT55L256V32F, MT55L256L36F, MT55L256V36F 3.3V VDD, 3.3V or 2.5V I/O 100-Pin TQFP1 165-Pin FBGA OPTIONS Timing (Access/Cycle/MHz) 7.5ns/10ns/100 MHz 8.5ns/11ns/90 MHz 9ns/12ns/83 MHz Configurations 3.3V I/O 512K x 18 256K x 32 256K x 36 2.5V I/O 512K x 18 256K x 32 256K x 36 Package 100-pin TQFP 165-pin FBGA Operating Temperature Range Commercial (0ºC to +70ºC) Industrial (-40°C to +85°C)** Part Number Example: MARKING -10 -11 -12 NOTE: 1. JEDEC-standard MS-026 BHA (LQF...