IS62WV5128CLL

IS62WV5128CLL 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 55ns, 70ns CMOS low power operation – 1.5 µW (typical) CMOS standby TTL compatible interface levels Single power supply – 2.5V--3.6V VDD (62WV5128CLL) Fully static operation: no clock or refresh required Three state outputs Industrial temperature available 2 CS Options Available ISSI MARCH 2003 ® DESCRIPTION The ISSI IS62WV5128CLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62WV5128CLL is packaged in the JEDEC standard 36-pin mini BGA (6mm x 8mm). 36-pin mini BGA is available in both 1CS and 2CS options. FUNCTIONAL BLOCK DIAGRAM A0-A18 DECODER 512K x 8 MEMORY ARRAY VDD GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CS2 CS1 OE WE CONTROL CIRCUIT www.DataSheet4U.com Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification...