2SD2057

Power Transistors 2SD2057 Silicon NPN triple diffusion planar type For horizontal deflection output Unit: mm s Features q q 15.0± 0.3 11.0± 0.2 Solder Dip q q q 16.2± 0.5 3.2 2.3 q Incorporating a built-in damper diode Reduction of a parts count and simplification of a circuit are allowed High breakdown voltage with high reliability High-speed switching Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 1500 1500 7 20 5 4 100 3 150 –55 to +150 Unit V V V A A A W ˚C ˚C 21.0± 0.5 15.0± 0.2 0.7 5.0± 0.2 3.2 φ3.2± 0.1 2.0± 0.2 1.1± 0.1 2.0± 0.1 0.6± 0.2 5.45± 0.3 10.9± 0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VEBO ICP IC IB PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(b) Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time (L-load) Fall time (L-load) Diode forward voltage (TC=25˚C) Symbol ICBO VEBO hFE VCE(sat) VBE(sat) fT tstg tf VF Conditions VCB = 1000V, IE = 0 VCB = 1500V, IE = 0 IE = 500mA, IC = 0 VCE = 10V, IC = 5A IC = 5A, IB =...