MP4211

MP4211 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2-π-MOSV inOne) MP4211 High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver 4-V gate drivability Small package by full molding (SIP 10 pin) High drain power dissipation (4 devices operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = −100 µA (max) (VDS = −60 V) Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation (1-device operation, Ta = 25°C) Drain power dissipation (- device operation, Ta = 25°C) Single pulse avalanche energy (Note 1) Avalanche current 1-device operation Repetitive avalanche energy (Note 2) 4-device operation Channel temperature Storage temperature range DC Pulse Symbol VDSS VDGR VGSS ID IDP PD Rating −60 −60 ±20 −5 −20 2.0 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-25A1C Weight: 2.1 g (typ.) W PDT 4.0 W EAS IAR EAR EART Tch Tstg 273 −5 0.2 mJ A mJ 0.4 150 −55 to 150 °C °C Note 1: Condition for avalanche energy (single pulse) measurement VDD = −25 V, starting Tch = 25°C, L = 14.84 mH, RG = 25 Ω, IAR = −5 A Note 2: Repetitive rating; pulse width limited ...