KMM366F803CK2

DRAM MODULE KMM366F80(8)3CK2 EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION The Samsung KMM366F80(8)3CK2 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)3CK2 consists of eight CMOS 8Mx8bits DRAMs in SOJ 400mil packages and one 2K EEPROM for SPD in 8-pin SOP package mounted on a 168-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM366F80(8)3CK2 is a Dual In-line Memory Module and is intended for mounting into 168 pin edge connector sockets. KMM366F80(8)3CK2 FEATURES Part Identification Part number KMM366F803CK2 KMM366F883CK2 PKG SOJ SOJ Ref. 4K 8K CBR ref. ROR ref. 4K/64ms 4K/64ms 8K/64ms New JEDEC standard proposal without buffer Serial Presence Detect with EEPROM Extended Data Out Mode Operation CAS-before-RAS Refresh capability RAS-only and Hidden refresh capability PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 13ns 15ns tRC 84ns 104ns tHPC 20ns 25ns LVTTL compatible inputs and outputs Single +3.3V±0.3V power supply PCB : Height(1000mil), single sided component PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Front Pin VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VCC DQ14 DQ15 *CB0 *CB1 VSS NC NC VCC W0 CAS0 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 Front CAS1 RAS0 OE0 VSS...