KMM366F400CK

DRAM MODULE KMM366F400CK & KMM366F410CK EDO Mode without buffer 4M x 64 DRAM DIMM using 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION The Samsung KMM366F40(1)0CK is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(1)0CK consists of sixteen CMOS 4Mx4bits DRAMs in SOJ 300mil package and one 1K/2K EEPROM for SPD in 8-pin TSSOP package mounted on a 168-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM366F40(1)0CK is a Dual In-line Memory Module and is intended for mounting into 168 pin edge connector sockets. KMM366F400CK KMM366F410CK FEATURES Part Identification - KMM366F400CK (4096 cycles/64ms Ref. SOJ) - KMM366F410CK (2048 cycles/32ms Ref. SOJ) New JEDEC standard proposal without buffer Serial Presence Detect with EEPROM Extended Data Out Mode Operation CAS-before-RAS Refresh capability RAS-only and Hidden refresh capability LVTTL compatible inputs and outputs Single +3.3V±0.3V power supply PCB : Height(1000mil), double sided component PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns tHPC 25ns 30ns PIN CONFIGURATIONS Pin Front Pin Front Pin Front Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VCC DQ14 DQ15 *CB0 *CB1 VSS NC NC VCC W0 CAS0 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 CA...