IR01H224

Data Sheet No. PD-6.075-G IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 HIGH VOLTAGE HALF BRIDGE Features Output Power MOSFETs in half-bridge configuration 500V rated breakdown voltage High side gate drive designed for bootstrap operation Matched propagation delay for both channels Undervoltage lockout 5V Schmitt-triggered input logic Half-Bridge output in phase with HIN Heatsink version (P2) with improved PD Product Summary VIN (max) ton/off trr 250V- 214/224 500V - 420 RDS(on) Description The IR01H(D)xxx is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a halfbridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use. Typical Connection w w VIN Vcc H IN L IN w .D t a S a D1 Vcc VB e h PD(TA = 25oC) t e U 4 .c 130 & 90 ns 260 ns m o 2.0Ω - H214 1.1Ω - H224 3.0Ω - H420 2.0W 4.0W - P2 Packages HV DC Bus NOTE: D1 is not required for the HD type 6 1 2 H IN VIN VO 9 3 L IN 7 COM TO LOAD 4 COM 1 ...