SD1496-03
RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS
Features
• • • • • • 960 MHz 24 VOLTS POUT = 55 WATTS G...
SD1496-03
RF & MICROWAVE
TRANSISTORS 800 / 900 MHz APPLICATIONS
Features
960 MHz 24 VOLTS POUT = 55 WATTS GP = 7.4 dB MINIMUM INPUT MATCHED COMMON BASE CONFIGURATION
DESCRIPTION:
The SD1496-03 is a 24V Class C epitaxial silicon
NPN planar
transistor designed primarily for amplifier applications in the 900 – 960 MHz frequency range. Internal input matching and common base configuration assure optimum gain and efficiency across the entire frequency band.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO VCEO VCES VEBO IC PDISS TSTG TJ
w
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Storage Temperature Junction Temperature
w
.D w
t a
S a
e h
t e
U 4
.c
m o
Parameter
Value
50 26 50 4.0 9 190 -65 to +150 +200
Unit
V V V V A W °C °C
Thermal Data
RTH(J-C) Thermal Resistance Junction-case
12-10-2002
w
w
w
.D
0.9
a
S a t
e e h
U 4 t
m o .c
°C/W
SD1496-03
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
BVCBO BVCES BVCEO BVEBO ICES ICBO HFE IC = 50 mA IC = 50 mA IC = 50 mA IE = 10 mA VCE = 20 V VCB = 30 V VCE = 5 V
Test Conditions Min.
IE = 0 mA VBE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IE = 0 mA IC = 1 A 50 50 26 3.0 ----20
Value Typ.
---------------
Max.
--------10 5 100
Unit
V V V V mA mA ---
DYNAMIC
Symbol
POUT GP ηC COB f = 960MHz f = 960MHz f = 960MHz f = 1 MHz
Test Conditions Min.
PIN = 10W PIN = 10W PIN = 10W VCB = 24V VCE = 24V VCE = 24V V...
