SD1495-03
RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS
Features
• • • • • • 960 MHz 24 VOLTS POUT = 30 WATTS G...
SD1495-03
RF & MICROWAVE
TRANSISTORS 800 / 900 MHz APPLICATIONS
Features
960 MHz 24 VOLTS POUT = 30 WATTS GP = 7.0 dB MINIMUM IMPUT MATCHING COMMON BASE CONFIGURATION
DESCRIPTION:
The SD1495-03 is a silicon
NPN transistor designed for 900 960 MHz base station applications. Gold metalization and internal impedance matching provide superior reliability and consistent broad band performance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO VCEO VCES VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
w
w
w
.D
t a
S a
e h
t e
U 4
.c
m o
Parameter
Value
50 30 50 4.0 9.0 100 +200 -65 to + 150
Unit
V V V V A W °C °C
Thermal Data
RTH(J-C) Thermal Resistance Junction-case
1.5
12-10-2002
w
w
w
.D
at
h S a
t e e
4U
.
m o c
°C/W
SD1495-03
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
BVCES BVCEO BVEBO ICBO HFE IC = 50mA IC = 50mA IE = 10mA VCB = 15V VCE = 5V
Test Conditions Min.
VBE = 0V IB = 0mA IC = 0mA IE = 0mA IC = 1A 50 30 4.0 --10
Value Typ.
-----------
Max.
------5 120
Unit
V V V mA ---
DYNAMIC
Symbol
POUT GP ηC COB f = 960MHz f = 960MHz f = 960MHz f = 1 MHz
Test Conditions Min.
PIN = 6.0W PIN = 6.0W PIN = 6.0W VCB = 24V VCE = 24V VCE = 24V VCE = 24V 30 7.0 50 ---
Value Typ.
---------
Max.
------55
Unit
W dB % pf
12-10-2002
SD1495-03
PACKAGE MECHANICAL DATA
12-10-2002
...
