Document
ST93C46A,46C,46T ST93C47C,47T
1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 64 x 16 or 128 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST93C46 version – 3V to 5.5V for ST93C47 version SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ENHANCED ESD/LATCH UP PERFORMANCE for ”C” VERSION ST93C46A, ST93C46C, ST93C46T, ST93C47C, ST93C47T are replaced by the M93C46
8 1
PSDIP8 (B) 0.4mm Frame
DESCRIPTION This specification covers a range of 1K bit serial EEPROM products, the ST93C46A,46C,46T specified at 5V±10% and the ST93C47C,47T specified at 3V to 5.5V. In the text, products are referred to as ST93C46. The ST93C46 is a 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High EnduranceSingle Polysilicon CMOS technology. The memory is accessed through a serial input (D) and output (Q). Table 1. Signal Names
S D Q C ORG VCC VSS Chip Select Input Serial Data Input Serial Data Output Serial Clock Organisation Select Supply Voltage Ground
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t a .D
S a
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Figure 1. Logic Diagram
U 4 t e
VCC D C S
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8 1
SO8 (M) 150mil Width
Q ST93C46 ST93C47
ORG
VSS
AI00871C
June 1997
This is information on a product still in production bu t not recommended for new de signs.
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U 4 t
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1/13
ST93C46A/46C/46T, ST93C47C/47T
Table 2. Absolute Maximum Ratings (1)
Symbol TA TSTG TLEAD VIO VCC VESD Electrostatic Discharge Voltage (Machine model) (3) Parameter Ambient Operating Temperature Storage Temperature Lead Temperature, Soldering (SO8 package) (PSDIP8 package) 40 sec 10 sec Value –40 to 125 –65 to 150 215 260 –0.3 to VCC +0.5 –0.3 to 6.5
(2)
Unit °C °C °C V V V V
Input or Output Voltages (Q = VOH or Hi-Z) Supply Voltage Electrostatic Discharge Voltage (Human Body model) ST93C46A,T ST93C46C ST93C46
2000 4000 500
Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents. 2. MIL-STD-883C, 3015.7 (100pF, 1500 Ω). 3. EIAJ IC-121 (Condition C) (200pF, 0 Ω).
Figure 2A. DIP Pin Connections
Figure 2B. SO Pin Connections
ST93C46 ST93C47 S C D Q 1 2 3 4 8 7 6 5
AI00872C
ST93C46 ST93C47 VCC DU ORG VSS S C D Q 1 2 3 4 8 7 6 5
AI00874C
VCC DU ORG VSS
Warning: DU = Don’t Use
Warning: DU = Don’t Use
Figure 2C. SO, 90° Turn, Pin Connections
ST93C46T ST93C47T DU VCC S C 1 2 3 4 8 7 6 5.