Document
Ordering number : ENN8007
SOP8501
SOP8501
Features
• •
PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
High breakdown voltage. (VCEO≥400V) Excellent hFE linearlity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg Conditions
Mounted on a ceramic board (2000mm2!0.8mm) 1unit Mounted on a ceramic board (2000mm2!0.8mm) 1unit
Electrical Characteristics at Ta=25°C
Parameter [PNP] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Turn-ON Time Storage Time Fall Time
Collector-to-Emitter Breakdown Voltage
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Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob ton tstg tf
VCB=--300V, IE=0 VEB=--4V, IC=0
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min
PNP
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--400 --400 --5 --1 --2
m o
NPN 400 400 5 0.2 0.4 Unit V V V A A W W °C °C
1.3 1.6 150 --55 to +150
Conditions
Ratings typ max --1.0 --1.0 40 50 --1.0 --1.0 --400 --400 --5 12 0.25 3.0 0.3 200
Unit
µA µA MHz V V V V V pF µs µs µs
VCE=--10V, IC=--100mA VCE=--10V, IC=--50mA
IC=-200mA, IB=--20mA IC=-200mA, IB=--20mA IC=-10µA, IE=0 IC=-1mA, RBE=∞
IE=--10µA, IC=0 VCB=--30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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D2004CB TS IM TB-00000396 No.8007-1/5
SOP8501
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Parameter [NPN] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob Cre ton toff VCB=300V, IE=0 VEB=4V, IC=0 VCE=10V, IC=50mA VCE=30V, IC=10mA IC=50mA, IB=5mA IC=50mA, IB=5mA IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 VCB=30V, f=1MHz VCB=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. 400 400 5 4 3 0.25 5.0 60 70 0.6 1.0 1.0 1.0 200 MHz V V V V V pF pF µs µs µA µA Symbol Conditions Ratings min typ max Unit
Package Dimensions unit : mm 2233
8 5
Electrical Connection
8
7
6
5
5.0
0.595
1.27
0.43
0.1
1.5
1.8max
1
4
0.2
1 : Emitter1 2 : Base1 3 : Emitter2 4 : Base2 5 : Collector2 6 : Collector2 7 : Collector1 8 : Collector1 SANYO : SOP8
1 : Emitter1 2 : Base1 3 : Emitter2 4 : Base2 5 : Collector2 6 : Collector2 7 : Collector1 8 : Collector1
Top view
4.4
6.0
0.3
1
2
3
4
Switching Time Test Circuit
[PNP] [NPN]
IB1 INPUT IB2 RB VR + 50Ω 100µF OUTPUT RL + 470µF INPUT
IB1 IB2 RB VR 50Ω + 100µF + 470µF OUTPUT RL
PW=20µs D.C.≤1%
PW=20µs D.C.≤1%
VBE=5V VCC= --150V 10IB1= --10IB2=IC= --200mA IC=200m RL=750Ω, RB=50Ω
VBE= --1V VCC=150V 10IB1= --10IB2=IC=50mA IC=50m RL=3kΩ, RB=200Ω
No.8007-2/5
SOP8501
--1.0
IC -- VBE
[PNP] VCE= --10V
120
IC -- VBE
[NPN] VCE=10V
Collector Current, IC -- mA
--0.8
100
Collector Current, IC -- A
80
--0.6
25°C
60
--0.4
Ta=7 5°C
--25°C
40
--0.2
20
0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V
3 2
ITR04587
Base-to-Emitter Voltage, VBE -- V
5 3 2
Ta=70°C 25°C --30°C
ITR04446
hFE -- IC
[PNP] VCE= --10V
hFE -- IC
Ta=70°C 25°C
--30°C
[NPN] VCE=10V
100
DC Current Gain, hFE
7 5 3 2
DC Current Gain, hFE
5 7 --100 2 3 5 7--1000 2 3 ITR04589 mA
Ta=75°C 25°C --25°C
100 7 5 3 2
10 7 5 3 3 5 7 --10 2 3
10 7 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3
Collector Current, IC -3 2
VCE(sat) -- IC
Collector Current, IC -- mA
5 3
ITR04448
[PNP.