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SOP8501 Dataheets PDF



Part Number SOP8501
Manufacturers Sanyo
Logo Sanyo
Description High Voltage Driver Applications
Datasheet SOP8501 DatasheetSOP8501 Datasheet (PDF)

Ordering number : ENN8007 SOP8501 SOP8501 Features • • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications High breakdown voltage. (VCEO≥400V) Excellent hFE linearlity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO.

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Ordering number : ENN8007 SOP8501 SOP8501 Features • • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications High breakdown voltage. (VCEO≥400V) Excellent hFE linearlity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg Conditions Mounted on a ceramic board (2000mm2!0.8mm) 1unit Mounted on a ceramic board (2000mm2!0.8mm) 1unit Electrical Characteristics at Ta=25°C Parameter [PNP] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Turn-ON Time Storage Time Fall Time Collector-to-Emitter Breakdown Voltage w w w t a .D Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob ton tstg tf VCB=--300V, IE=0 VEB=--4V, IC=0 S a e h U 4 t e min PNP .c --400 --400 --5 --1 --2 m o NPN 400 400 5 0.2 0.4 Unit V V V A A W W °C °C 1.3 1.6 150 --55 to +150 Conditions Ratings typ max --1.0 --1.0 40 50 --1.0 --1.0 --400 --400 --5 12 0.25 3.0 0.3 200 Unit µA µA MHz V V V V V pF µs µs µs VCE=--10V, IC=--100mA VCE=--10V, IC=--50mA IC=-200mA, IB=--20mA IC=-200mA, IB=--20mA IC=-10µA, IE=0 IC=-1mA, RBE=∞ IE=--10µA, IC=0 VCB=--30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN w w w .D a S a t e e h U 4 t m o .c D2004CB TS IM TB-00000396 No.8007-1/5 SOP8501 Continued from preceding page. Parameter [NPN] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob Cre ton toff VCB=300V, IE=0 VEB=4V, IC=0 VCE=10V, IC=50mA VCE=30V, IC=10mA IC=50mA, IB=5mA IC=50mA, IB=5mA IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 VCB=30V, f=1MHz VCB=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. 400 400 5 4 3 0.25 5.0 60 70 0.6 1.0 1.0 1.0 200 MHz V V V V V pF pF µs µs µA µA Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm 2233 8 5 Electrical Connection 8 7 6 5 5.0 0.595 1.27 0.43 0.1 1.5 1.8max 1 4 0.2 1 : Emitter1 2 : Base1 3 : Emitter2 4 : Base2 5 : Collector2 6 : Collector2 7 : Collector1 8 : Collector1 SANYO : SOP8 1 : Emitter1 2 : Base1 3 : Emitter2 4 : Base2 5 : Collector2 6 : Collector2 7 : Collector1 8 : Collector1 Top view 4.4 6.0 0.3 1 2 3 4 Switching Time Test Circuit [PNP] [NPN] IB1 INPUT IB2 RB VR + 50Ω 100µF OUTPUT RL + 470µF INPUT IB1 IB2 RB VR 50Ω + 100µF + 470µF OUTPUT RL PW=20µs D.C.≤1% PW=20µs D.C.≤1% VBE=5V VCC= --150V 10IB1= --10IB2=IC= --200mA IC=200m RL=750Ω, RB=50Ω VBE= --1V VCC=150V 10IB1= --10IB2=IC=50mA IC=50m RL=3kΩ, RB=200Ω No.8007-2/5 SOP8501 --1.0 IC -- VBE [PNP] VCE= --10V 120 IC -- VBE [NPN] VCE=10V Collector Current, IC -- mA --0.8 100 Collector Current, IC -- A 80 --0.6 25°C 60 --0.4 Ta=7 5°C --25°C 40 --0.2 20 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-to-Emitter Voltage, VBE -- V 3 2 ITR04587 Base-to-Emitter Voltage, VBE -- V 5 3 2 Ta=70°C 25°C --30°C ITR04446 hFE -- IC [PNP] VCE= --10V hFE -- IC Ta=70°C 25°C --30°C [NPN] VCE=10V 100 DC Current Gain, hFE 7 5 3 2 DC Current Gain, hFE 5 7 --100 2 3 5 7--1000 2 3 ITR04589 mA Ta=75°C 25°C --25°C 100 7 5 3 2 10 7 5 3 3 5 7 --10 2 3 10 7 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -3 2 VCE(sat) -- IC Collector Current, IC -- mA 5 3 ITR04448 [PNP.


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