HN29V1G91T-30

HN29V1G91T-30 128M × 8-bit AG-AND Flash Memory REJ03C0056-0400Z Rev. 4.00 Jul.20.2004 Description The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist GateAND) type Flash memory cell using multi level cell technology provides both the most cost effective solution and high speed programming. Features On-board single power supply: VCC = 2.7 V to 3.6 V Operation Temperature range: Ta = 0 to +70°C Memory organization  Memory array: (2048+64) bytes × 16384 page × 4 Bank  Page size: (2048+64) bytes  Block size: (2048+64) bytes × 2 page  Page Register: (2048+64) bytes × 4 Bank Multi level memory cell  2bit/cell Automatic program  Page program  Multi bank program  Cache program  2 page cache program Automatic Erase  Block Erase  Multi Bank Block Erase Access time  Memory array to register (1st access time): 120 µs max  Serial access: 35 ns min Rev.4.00, Jul.20.2004, page 1 of 89 HN29V1G91T-30 Low power dissipation  Read ICC1 (50 ns cycle): 10 mA (typ)  Read ICC2 (35 ns cycle): 15 mA (typ)  Program ICC3 (single bank): 10 mA (typ)  Program ICC4 (Multi bank): 20 mA (typ)  Erase ICC5 (single bank): 10 mA (typ)  Erase ICC6 (Multi bank): 15 mA (typ)  Standby ISB1 (TTL): 1 mA (max)  Standby ISB2 (CMOS): 50 µA (max)  Deep Standby ISB3: 5 µA (max) Program time: 600 µs (typ) (Single/Multi bank)  transfer rate: 10...