P-Channel MOSFET
SUD45P03-15
Siliconix
P-Channel 30-V (D-S), 150_C MOSFET
Product Summary
VDS (V) –30
rDS(on) (W) 0.015 @ VGS = –10 V ...
Description
SUD45P03-15
Siliconix
P-Channel 30-V (D-S), 150_C MOSFET
Product Summary
VDS (V) –30
rDS(on) (W) 0.015 @ VGS = –10 V 0.024 @ VGS = –4.5 V
TO-252
ID (A)a "13 "8
S
GD S Top View
Order Number: SUD45P03-15
Drain Connected to Tab
G
D P-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentb Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipationb Operating Junction and Storage Temperature Range
TA = 25_C TA = 100_C
TC = 25_C TA = 25_C
VDS VGS
ID IDM IS
PD TJ, Tstg
–30 "20 "13 "8 "100 –13
70 4a –55 to 150
V
A
W _C
Thermal Resistance Ratings
Parameter
Symbol
Typical
Maximum Unit
Maximum Junction-to-Ambientb Maximum Junction-to-Case
RthJA RthJC
30 _C/W
1.8
Notes
a. Calculated Rating for TA = 25_C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings
and Typical Characteristics). b. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70267.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
1-51
SUD45P03-15
Siliconix
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
...
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