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SUD45P03-15

Vishay Siliconix

P-Channel MOSFET

SUD45P03-15 Siliconix P-Channel 30-V (D-S), 150_C MOSFET Product Summary VDS (V) –30 rDS(on) (W) 0.015 @ VGS = –10 V ...


Vishay Siliconix

SUD45P03-15

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SUD45P03-15 Siliconix P-Channel 30-V (D-S), 150_C MOSFET Product Summary VDS (V) –30 rDS(on) (W) 0.015 @ VGS = –10 V 0.024 @ VGS = –4.5 V TO-252 ID (A)a "13 "8 S GD S Top View Order Number: SUD45P03-15 Drain Connected to Tab G D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentb Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipationb Operating Junction and Storage Temperature Range TA = 25_C TA = 100_C TC = 25_C TA = 25_C VDS VGS ID IDM IS PD TJ, Tstg –30 "20 "13 "8 "100 –13 70 4a –55 to 150 V A W _C Thermal Resistance Ratings Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb Maximum Junction-to-Case RthJA RthJC 30 _C/W 1.8 Notes a. Calculated Rating for TA = 25_C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical Characteristics). b. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70267. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 1-51 SUD45P03-15 Siliconix Specifications (TJ = 25_C Unless Otherwise Noted) Parameter ...




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