SUD45P03-10

P-Channel 30-V (D-S), MOSFET SUD45P03-10 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.010 at VGS = - 10 V 0.018 at VGS = - 4.5 V ID (A)a - 15 - 12 FEATURES TrenchFET® Power MOSFETs RoHS COMPLIANT TO-252 S G Drain Connected to Tab GDS Top View Ordering Information: SUD45P03-10-E3 (Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currentb TA = 25 °C TA = 100 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Maximum Power Dissipationb TC = 25 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 30 ± 20 - 15 -8 - 100 - 15 70 4b - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb Maximum Junction-to-Case RthJA RthJC 30 °C/W 1.8 Notes: a. Calculated Rating for TA = 25 °C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical Characteristics). b. Surface Mounted on FR4 board, t ≤ 10 s. Document Number: 70766 S-81734-Rev. E, 04-Aug-08 www.vishay.com 1 SUD45P03-10 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source O...