SUV85N10-10

SUV85N10-10 New Product Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 FEATURES rDS(on) (W) ID (A) 85 a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0105 @ VGS = 10 V 0.012 @ VGS = 4.5 V APPLICATIONS D DC/DC Primary Side Switch D TO-262 1 2 3 G G D S Top View SUV85N10-10 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range w w .D w TC = 25_C TC = 125_C t a S a e h ID t e U 4 S .c Limit 100 "20 85a 60a 240 75 280 250c m o N-Channel MOSFET Symbol VDS VGS Unit V A IDM IAR EAR PD TJ, Tstg L = 0.1 mH TC = 25_C mJ W _C TA = 25_C d 3.75 - 55 to 175 THERMAL RESISTANCE RATINGS Parameter PCB Mountd J Junction-to-Ambient ti t A bi t Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 72039 S-03601—Rev. B, 31-Mar-03 Free Air RthJA RthJC Symbol Limit 40 62.5 0.6 w w w .D at h S a ee U 4 t Unit _C/W m o .c www.vishay.com 1 SUV85N10-10 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250...