H5N5001FM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1380 (Z) 1st. Edition Mar. 2001 Features
Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings : RDS(on) =1.1 Ω typ. : I DSS =1 µA max (at VDS = 500 V) : tf = 15ns typ (at VGS = 10 V, V DD = 250 V, I D = 2.5 A) : Qg = 15nC typ (at VDD = 40...
