(H5N5006xx) Silicon N-Channel MOSFET
H5N5006LD, H5N5006LS, H5N5006LM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1549 (Z)
Features
• Low o...
Description
H5N5006LD, H5N5006LS, H5N5006LM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1549 (Z)
Features
Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings
Outline
LDPAK
G
w
w
w
a .D
D S
S ta
1 2 3
e h
1 2
U 4 t e
4 4
.c
m o
Rev.0 Aug.2002
4
3
1
2
H5N5006LS
3
H5N5006LD
H5N5006LM 1. Gate 2. Drain 3. Source 4. Drain
w
w
w
.D
at
h S a
t e e
4U
.
m o c
H5N5006LD, H5N5006LS, H5N5006LM
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR IAP
Note 3 Note 1
Value 500 ±30 3.5 14 3.5 3.5 50 2.5 150 –55 to +150
Unit V V A A A A W °C/W °C °C
Pch
Note 2
θch-c Tch Tstg
Rev.0, Aug. 2002, page 2 of 12
H5N5006LD, H5N5006LS, H5N5006LM
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min 500 — — 3.0 1.8 — — — — — — — — — — — — — — Typ — — — — 3.0 2.5 365 35 8 20 13 48 14 14 2 8 0.85 280 0.8 Max — 1 ±0.1 4.5 — 3.0 — — — — — — — — — — 1.3 — — Unit V µA µA V S Ω pF pF pF ns ns ns ns nC nC nC V ns µC Test Conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 1.75 A, VDS = 10 V Note ID = 1.75 A, VGS = 10 V Note VDS = 25 V VGS = 0 f ...
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