H5N5004PL

H5N5004PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1381 (Z) Target Specification 1st. Edition Mar. 2001 Features Low on-resistance: R DS(on) = 0.09 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A) Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID = 50 A) Avalanche ratings Built-in fast recovery diode: trr = 190 ns typ Outline TO-3PL w w .D w G t a D S S a 1 2 e h 3 t e U 4 .c m o 1. Gate 2. Drain (Flange) 3. Source w w w .D a S a t e e h U 4 t m o .c H5N5004PL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 µs, duty cycle 1% 2. Value at Tc = 25°C 3. Tch 150°C Symbol VDSS VGSS ID ID Note1 (pulse) Ratings 500 ±30 50 200 50 Unit V V A A A A A W °C/W °C °C I DR I DR Note1 (pulse) 200 15 250 0.5 150 –55 to +150 I AP Note3 Pch Note2 θ ch-c Tch Tstg 2 H5N5004PL Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS 500 — — 2.0 — 27 — — — — — — — — — — — — — Typ — — — — 0.09 45 7630 770 160 90 340 370 280 220 30 110 0.98 190 1.3 Max — ±0.1 10 4.0 0.11 — — — — — — ...