SD1224-10
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
. . . . . .
30 MHz 28 VOLTS IMD − 28 dB COMMON EMITTER GOLD M...
SD1224-10
RF & MICROWAVE
TRANSISTORS HF SSB APPLICATIONS
. . . . . .
30 MHz 28 VOLTS IMD − 28 dB COMMON EMITTER GOLD METALLIZATION POUT = 30 W MIN. WITH 18 dB GAIN
.380 4LFL (M113) epoxy sealed ORDER CODE SD1224-10
DESCRIPTION
The SD1224-10 is a 28 V epitaxial silicon
NPN planar
transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol
VCBO VCEO VEBO IC PDISS TJ TSTG
Collector-Base Voltage
w
Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
w
w
t a .D
S a
e h
U 4 t e
1. Collector 2. Emitter
.c
m o
BRANDING 1224-10
PIN CONNECTION
3. Base 4. Emitter
Parameter
Value
Unit
65 36 4.0 4.5 80 +200 − 65 to +150
V V V A W °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
October 1992
2.2
w
w
w
.D
a t a
e h S °C/W
4 t e
°C
U
m o .c
1/3
SD1224-10
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVCES BVCEO BVEBO ICBO hFE
IC = 200mA IC = 200mA IC = 200mA IE = 10mA VCB = 30V VCE = 5V
IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IC = .5A
65 65 35 4.0 — 5
— — — — — —
— — — — 1 200
V V V V mA —
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Unit
POUT GP IMD COB
Note: PI N
f = 30 MHz f = 30 MHz f = 30 MHz f = 1 MHz = 0.48W
VCE = 28 V VCE = 28 V VCE = 28 V VCB = 30 V
ICQ = 25 mA IC...