SD1222-5
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1222-5 is a transistor designed primarily for 12.5 V AM...
SD1222-5
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI SD1222-5 is a
transistor designed primarily for 12.5 V AM Class-C amplifiers in the118-136 MHz band and 28 V Class-C RF amplifiers in ground stations.
PACKAGE STYLE .380 4L FLG
B .112 x 45°
FEATURES:
PG = 8.2 dB min. at 5 W/30 MHz IMD3 = -30 dBc max. at 20 W (PEP) Omnigold™ Metalization System Emitter Ballasting
E B
F
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 3.0 A 65 V 35 V 4.0 V 30 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 5.83 °C/W
DIM
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO ICES hFE Cob GP
TC = 25 °C
IC = 200 mA IE = 10 mA VCB = 30 V VCE = 30 V VCE = 5.0 V VCB = 30 V VCC = 27 V
IC = 200 mA
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NONETEST CONDITIONS
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.D
t a
S a
e h
t e
A B C D E F G H I J
U 4
D MINIMUM
inches / mm
.c
E
C E
C
m o
A J .125 G H I MAXIMUM
inches / mm
Ø.125 NOM. FULL R
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84
.730 / 18.54 .980 / 24.89 .385 / 9.78
.004 / 0.10 .085 / 2.16 .160 / 4.06
.006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11
.240 / 6.10
.255 / 6.48
MINIMUM TYPICAL MAXIMUM
35 65 4.0 1.0
UNITS
V V V
TA = 125°C IC = 200 mA f = 1.0 MHz POUT = 20 W f = 136 MHz 5.0
10
w A D V A N C E D S E M I C O N D U C T O R, I N C. w
Specifications are subject to change without notice.
.D
a at
e h S
35 35
et
4U
mA ---
.
m o c
mA
pF pF
REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
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