RN2602

RN2601~RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2601,RN2602,RN2603 RN2604,RN2605,RN2606 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1601~1606 Unit in mm Equivalent Circuit and Bias Resistor Values Type No. RN2601 RN2602 RN2603 RN2604 RN2605 RN2606 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 JEDEC EIAJ TOSHIBA Weight: 0.015g ― ― 2-3N1A Equivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2601~2606 RN2601~2606 RN2601~2604 RN2605, 2606 Symbol VCBO VCEO VEBO IC P C* Tj Tstg Rating −50 −50 −10 −5 −100 300 150 −55~150 Unit V V V mA mW °C °C * Total rating 1 2001-06-05 RN2601~RN2606 Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Collector cut-off current RN2601~2606 RN2601 RN2602 Emitter cut-off current RN2603 RN2604 RN2605 RN2606 RN2601 RN2602 DC current gain RN2603 RN2604 RN2605 RN2606 Collector-emitter saturation voltage RN2601~2606 RN2601 RN2602 Input voltage (ON) RN2603 RN2604 RN2605 RN2606 Input voltage (OFF) Translation frequency Collector output capacitance RN2601~2604 RN2605, 2606 RN2601~26...