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AS4C4M4E1
4M x 4 CMOS DRAM
Description
May 2001 ® AS4C4M4E1 4M×4 CMOS DRAM (EDO) family Features Organization: 4,194,304 words × 4 bits High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time TTL-compatible, three-state I/O JEDEC standard package - 300 mil, 24/26-pin SOJ - 300 mil, 24/26-pin TSOP Low power consumption - Active: 908 mW m...
Alliance Semiconductor
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