DatasheetsPDF.com
AS4C1M16E5
5V 1M x 16 CMOS DRAM
Description
$XJXVW $6&0( 9 0î &026 '5$0 ('2 )HDWXUHV Organization: 1,048,576 words × 16 bits High speed - 45/50/60 ns RAS access time - 20/20/25 ns hyper page cycle time - 10/12/15 ns CAS access time 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh Read-modify-write TTL-compatible, three-state DQ JEDEC stan...
Alliance Semiconductor
Download AS4C1M16E5 Datasheet
Similar Datasheet
AS4C1M16E5
5V 1M x 16 CMOS DRAM
- Alliance Semiconductor
AS4C1M16F5
5V 1M x 16 CMOS DRAM
- Alliance Semiconductor
AS4C1M16S
1M x 16 bit Synchronous DRAM
- Alliance Memory
AS4C1M16S-C
1M x 16 bit Synchronous DRAM
- Alliance Memory
AS4C1M16S-I
1M x 16 bit Synchronous DRAM
- Alliance Memory
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
