MSA-0170

Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0170 Features Cascadable 50 Ω Gain Block 3 dB Bandwidth: DC to 1.3 GHz High Gain: 18.5 dB Typical at 0.5 GHz Unconditionally Stable (k>1) Hermetic Gold-ceramic Microstrip Package designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 70 mil Package Description The MSA-0170 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic high reliability package. This MMIC is Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5 V 2 5965-9692E 6-254 MSA-0170 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 40 mA 200 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 125°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 8 mW/°C for TC > 175°C. 4. The small spot size of this technique results in a high...