MSA-0504

Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0504 Features Cascadable 50 Ω Gain Block High Output Power: 18.0 dBm Typical P1 dB at 1.0␣ GHz Low Distortion: 29.0 dBm Typical IP3 at 1.0␣ GHz 7.0 dB Typical Gain at 1.0␣ GHz Low Cost Plastic Package in a low cost plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial systems. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 04A Plastic Package Description The MSA-0504 is a high performance medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed Typical Biasing Configuration R bias VCC > 12 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 8.4 V 2 5965-9580E 6-350 MSA-0504 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 135 mA 1.5 W +25 dBm 200°C –65 to 150°C Thermal Resistance[2,4]: θjc = 75°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 13.3 mW/°C for TC > 88°C. 4. See MEASUREMENTS section “Thermal Resis...