MSA-0435

Cascadable Silicon Bipolar MMIC␣ Amplifiers Technical Data MSA-0435, -0436 Features Cascadable 50 Ω Gain Block 3 dB Bandwidth: DC to 3.8 GHz 12.5 dBm Typical P1 dB at 1.0␣ GHz 8.5 dB Typical Gain at 1.0␣ GHz Unconditionally Stable (k>1) Cost Effective Ceramic Microstrip Package designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package 36) as MSA-0436. 35 micro-X Package[1] Note: 1. Short leaded 36 package available upon request. Description The MSA-0435 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.25 V 2 5965-9575E 6-330 MSA-0435, -0436 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] Absolute Maximum[1] 100 mA 650 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,5]: θjc = 140°C/W Notes: 1. ...