MSA-0885

Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0885 Features Usable Gain to 6.0␣ GHz High Gain: 32.5 dB Typical at 0.1␣ GHz 22.5 dB Typical at 1.0␣ GHz Low Noise Figure: 3.3␣ dB Typical at 1.0␣ GHz Low Cost Plastic Package purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 85 Plastic Package Description The MSA-0885 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is designed for use as a general Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 7.8 V 2 5965-9545E 6-422 MSA-0885 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 65 mA 500 mW +13 dBm 150°C –65°C to 150°C Thermal Resistance[2,4]: θjc = 130°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 7.7 ...