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MSA-3135 Dataheets PDF



Part Number MSA-3135
Manufacturers Hewlett-Packard
Logo Hewlett-Packard
Description (MSA-31xx) Cascadable Silicon Bipolar MMIC Amplifier
Datasheet MSA-3135 DatasheetMSA-3135 Datasheet (PDF)

Silicon Bipolar RFIC Amplifiers Technical Data MSA-31XX Series Features MSA-3111 • Surface Mount SOT-143 Package • 3 dB Bandwidth: DC to 0.5 GHz • 18.4 dB Gain at 1 GHz • 3.5 dB NF at 1 GHz MSA-3135 • Hermetic Ceramic Package • 3 dB Bandwidth: DC to 0.6 GHz • 19.6 dB Gain at 1 GHz • 3.2 dB NF at 1 GHz MSA-3185 • Plastic Microstrip Package • 3 dB Bandwidth: DC to 0.5 GHz • 18.7 dB Gain at 1 GHz • 3.5 dB NF at 1 GHz MSA-3186 • Surface Mount Plastic Microstrip Package • 3 dB Bandwidth: DC to 0.5 .

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Silicon Bipolar RFIC Amplifiers Technical Data MSA-31XX Series Features MSA-3111 • Surface Mount SOT-143 Package • 3 dB Bandwidth: DC to 0.5 GHz • 18.4 dB Gain at 1 GHz • 3.5 dB NF at 1 GHz MSA-3135 • Hermetic Ceramic Package • 3 dB Bandwidth: DC to 0.6 GHz • 19.6 dB Gain at 1 GHz • 3.2 dB NF at 1 GHz MSA-3185 • Plastic Microstrip Package • 3 dB Bandwidth: DC to 0.5 GHz • 18.7 dB Gain at 1 GHz • 3.5 dB NF at 1 GHz MSA-3186 • Surface Mount Plastic Microstrip Package • 3 dB Bandwidth: DC to 0.5 GHz • 18.7 dB Gain at 1 GHz • 3.5 dB NF at 1 GHz MSA-3111 Description The MSA-31XX series are high performance silicon bipolar RFIC amplifiers designed to be cascadable in 50 Ω systems. The stability factor of K > 1 contributes to easy cascading in numerous narrow and broadband IF and RF commercial and industrial applications. The MODAMP MSA series is fabricated using a 10 GHz fT, 25 GHz FMAX, silicon bipolar RFIC process which utilizes nitride selfalignment, ion implantation, and gold metallization to achieve excellent uniformity, performance, and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Package options include, the industry standard plastic surface mount SOT-143 package, the 100␣ mil surface mountable hermetic ceramic package, the 85␣ mil plastic microstripline package, and the 85 mil surface mountable plastic microstripline package. MSA-3135 MSA-3185 MSA-3186 5965-9664E 6-482 Absolute Maximum Ratings[1] Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Thermal Resistance: θ jc MSA3111 50 mA 250 mW[3a] +13 dBm 150°C -65 to 150°C MSA3135 60 mA 325 mW[3b] +13 dBm 200°C -65 to 200°C MSA3185, -3186 60 mA Typical Biasing Configuration R bias VCC 7 V 4 RF CHOKE 3 Vd = 4.5 V 325 mW[3c] +13 dBm 150°C -65 to 150°C DC BLOCK INPUT 1 MSA 2 R bias = VCC – V d Id OUTPUT 500°C/W 155°C/W 115°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3a. Derate at 2.0 mW/°C for TC > 25°C. b. Derate at 6.5 mW/°C for TC > 149°C. c. Derate at 8.7 mW/°C for TC > 112°C. Electrical Specifications, TA = 25°C ID = 29 mA, Zo = 50 Ω MSA-3111 Symbol GP Parameters and Test Conditions Power Gain 2) (|S21| f = 0.1 GHz f = 0.5 GHz f = 1.0 GHz Gain Flatness f = 0.1 to 0.3 GHz 3 dB Bandwidth Input VSWR f = 0.1 to 3.0 GHz Output VSWR f = 0.1 to 3.0 GHz P1dB Power Output @ 1 dB Gain Compression: f = 1.0 GHz 50 Ω Noise Figure f = 1.0 GHz Third Order Intercept Point f = 1.0 GHz Group Delay f = 1.0 GHz Device Voltage TC = 25°C Device Voltage Temperature Coefficient Units Min. Typ. Max. MSA-3135 Min. Typ. Max. MSA-3185, -3186 Min. Typ. Max. dB 23.5 24.4 22.4 18.4 ± 0.5 0.5 1.2:1 1.2:1 23.5 24.5 22.8 19.6 ± 0.4 0.6 1.2:1 1.2:1 26.5 23.5 24.6 22.3 18.7 ± 0.5 0.5 1.2:1 1.4:1 ∆GP f3dB VSWR dB GHz ± 1.0 dBm 9.0 9.3 9.0 NF dB 3.5 3.2 3.5 IP3 dBm psec V mV/°C 4.0 23 130 4.5 -9.6 6.0 4.5 22 130 4.7 -9.6 5.5 4.0 21 130 4.7 -9.6 6.0 td VD dV/dT Note: 1. Refer to “Tape and Reel Packaging for Surface Mount Devices.” 6-483 Typical Performance for MSA-3111 30 30 28 14 40 mA 12 35 mA 10 30 mA P 1dB(dBm) 25 -55°C 26 24 0.1 GHz 0.5 GHz Gp (dB) Gp (dB) 20 -25°C 25°C 85°C 22 20 18 16 1.0 GHz 8 6 4 25 mA 15 10 14 12 2.0 GHz 2 0 20 mA 5 0.1 1.0 FREQUENCY (GHz) 4.0 10 20 25 30 I D (mA) 35 40 0.1 1.0 FREQUENCY (GHz) 4.0 Figure 1. Power Gain vs. Frequency at Four Temperatures, ID = 29 mA. 5 Figure 2. Power Gain vs. Current at 25°C. 19 Figure 3. Typical P1dB vs. Frequency at 25°C. 40 -55°C -25°C 25°C GAIN (dB) GP 18 30 NOISE FIGURE (dB) I D mA 20 mA 4 16 5 4 NOISE FIGURE (dB) 40 mA 17 6 85°C 20 P 1dB (dBm) 10 9 8 -25 NF 3 10 P1dB 0 3 0.1 1.0 FREQUENCY (GHz) 4.0 25 AMBIENT TEMPERATURE (°C) 85 0 1 2 3 VD (VOLTS) 4 5 6 Figure 4. Noise Figure vs. Frequency at ID = 29 mA. Figure 5. Power Gain, Noise Figure, and P1dB vs. Temperature at 1 GHz and ID = 29 mA. Figure 6. ID vs. VD at Four Temperatures. Typical Scattering Parameters at TA = 25°C, for MSA-3111 ID = 29 mA, Zo = 50 Ω Frequency (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 S11 Mag. 0.05 0.06 0.07 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.10 0.10 0.10 0.12 0.15 0.21 0.29 0.36 0.42 Ang. 3 4 -4 -8 -12 -18 -22 -26 -32 -35 -59 -79 -104 -129 -163 164 140 121 109 98 (dB) 24.4 24.0 23.4 22.7 22.0 21.1 20.4 19.7 19.0 18.4 15.6 13.4 11.8 10.4 9.3 8.2 7.4 6.5 5.6 4.6 S21 Mag. 16.53 15.83 14.78 13.59 12.53 11.41 10.47 9.63 8.89 8.27 5.99 4.69 3.88 3.31 2.91 2.58 2.34 2.10 1.90 1.70 Ang. 167 156 146 136 128 121 114 109 104 99 80 65 52 39 27 16 4 -7 -18 -28 6-484 (dB) -27.0 -26.5 -26.0 -25.3 -24.6 -23.9 -23.1 -22.4 -21.7 -21.1 -18.5 -16.6 -15.2 -14.1 -13.2 -12.6 -12.1 -11.7 -11.3 -11.0 S12 Mag. 0.045 0.047 0.050 0.054 0.059 0.064 0.070 0.076 0.082 0.088 0.118 0.148 0.175 0.198 0.219 0.236 0.250 0.260 0.271 0.282 Ang. 9 16 23 28 33 36 3.


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