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MSA-3111 Dataheets PDF



Part Number MSA-3111
Manufacturers Hewlett-Packard
Logo Hewlett-Packard
Description (MSA-3111 / MSA-3186) Cascadable Silicon Bipolar MMIC Amplifier
Datasheet MSA-3111 DatasheetMSA-3111 Datasheet (PDF)

Agilent MSA-3111, MSA-3186 Silicon Bipolar RFIC Amplifiers Data Sheet Features MSA-3111 • Surface Mount SOT-143 Package • 3 dB Bandwidth: DC to 0.5 GHz • 18.4 dB Gain at 1 GHz • 3.5 dB NF at 1 GHz • Lead-free Option Available MSA-3186 • Surface Mount Plastic Microstrip Package • 3 dB Bandwidth: DC to 0.5 GHz • 18.7 dB Gain at 1 GHz • 3.5 dB NF at 1 GHz • Lead-free Option Available Description The MSA-31XX series are high performance silicon bipolar RFIC amplifiers designed to be cascadable in .

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Agilent MSA-3111, MSA-3186 Silicon Bipolar RFIC Amplifiers Data Sheet Features MSA-3111 • Surface Mount SOT-143 Package • 3 dB Bandwidth: DC to 0.5 GHz • 18.4 dB Gain at 1 GHz • 3.5 dB NF at 1 GHz • Lead-free Option Available MSA-3186 • Surface Mount Plastic Microstrip Package • 3 dB Bandwidth: DC to 0.5 GHz • 18.7 dB Gain at 1 GHz • 3.5 dB NF at 1 GHz • Lead-free Option Available Description The MSA-31XX series are high performance silicon bipolar RFIC amplifiers designed to be cascadable in 50 Ω systems. The stability factor of K > 1 contributes to easy cascading in numerous narrow and broadband IF and RF commercial and industrial applications. The MODAMP MSA series is fabricated using a 10 GHz fT, 25 GHz FMAX, silicon bipolar RFIC process which utilizes nitride selfalignment, ion implantation, and gold metallization to achieve excellent uniformity, performance, and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Package options include the industry standard plastic surface mount SOT-143 package and the 85 mil surface mountable plastic microstripline package. MSA-3111 MSA-3186 2 Absolute Maximum Ratings[1] Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Thermal Resistance: θ jc MSA-3111 50 mA 250 mW[3a] +13 dBm 150°C -65 to 150°C MSA-3186 60 mA 325 mW[3c] Typical Biasing Configuration R bias VCC ≥ 7 V 4 DC BLOCK INPUT MSA 2 3 RF CHOKE +13 dBm 150°C -65 to 150°C 1 OUTPUT Vd = 4.5 V R bias = VCC – V d Id 500°C/W 115°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3a. Derate at 2.0 mW/°C for TC > 25°C. b. Derate at 6.5 mW/°C for TC > 149°C. c. Derate at 8.7 mW/°C for TC > 112°C. Electrical Specifications, TA = 25°C ID = 29 mA, Zo = 50 Ω MSA-3111 Symbol GP Parameters and Test Conditions Power Gain (|S21|2) f = 0.1 GHz f = 0.5 GHz f = 1.0 GHz Gain Flatness f = 0.1 to 0.3 GHz 3 dB Bandwidth Input VSWR f = 0.1 to 3.0 GHz Output VSWR f = 0.1 to 3.0 GHz P1dB Power Output @ 1 dB Gain Compression: f = 1.0 GHz 50 Ω Noise Figure f = 1.0 GHz Third Order Intercept Point f = 1.0 GHz Group Delay f = 1.0 GHz Device Voltage TC = 25°C Device Voltage Temperature Coefficient Units Min. Typ. Max. MSA -3186 Min. Typ. Max. dB 23.5 24.4 22.4 18.4 ± 0.5 0.5 1.2:1 1.2:1 23.5 24.6 22.3 18.7 ± 0.5 0.5 1.2:1 1.4:1 ∆GP f3dB VSWR dB GHz dBm 9.0 9.0 NF dB 3.5 3.5 IP3 dBm psec V mV/°C 4.0 23 130 4.5 -9.6 6.0 4.0 21 130 4.7 -9.6 6.0 td VD dV/dT 3 Typical Performance for MSA-3111 30 30 28 14 40 mA 12 35 mA 10 30 mA 25 -55°C -25°C 25°C 85°C 26 24 Gp (dB) 0.1 GHz 0.5 GHz P 1dB(dBm) Gp (dB) 20 22 20 18 16 1.0 GHz 8 6 4 25 mA 15 10 14 12 2.0 GHz 2 0 20 mA 5 0.1 1.0 FREQUENCY (GHz) 4.0 10 20 25 30 I D (mA) 35 40 0.1 1.0 FREQUENCY (GHz) 4.0 Figure 1. Power Gain vs. Frequency at Four Temperatures, ID = 29 mA. Figure 2. Power Gain vs. Current at 25°C. 19 GAIN (.


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