Document
Silicon Bipolar RFIC Amplifiers Technical Data
MSA-20xx Series
Features
MSA-2011
• Surface Mount SOT-143 Package • 3 dB Bandwidth: DC to 1.0 GHz • 16.2 dB Gain at 1 GHz • 4.3 dB NF at 1 GHz
MSA-2011
Description
The MSA-20xx series are high performance silicon bipolar RFIC amplifiers designed to be cascadable in 50 Ω systems. The stability factor of K > 1 contributes to easy cascading in numerous narrow and broadband IF and RF commercial and industrial applications. The MSA series is fabricated using a 10 GHz fT, 25 GHz FMAX, silicon bipolar RFIC process which utilizes nitride self-alignment, ion implantation, and gold metallization to achieve excellent uniformity, performance, and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Package options include the industry standard plastic surface mount SOT-143 package, the 100 mil surface mountable hermetic ceramic package, the 85 mil plastic microstripline package, and the 85 mil surface mountable plastic microstripline package.
MSA-2035
MSA-2035
• Hermetic Ceramic Package • 3 dB Bandwidth: DC to 1.1 GHz • 17.3 dB Gain at 1 GHz • 3.7 dB NF at 1 GHz
MSA-2085
• Plastic Microstrip Package • 3 dB Bandwidth: DC to 1.1 GHz • 16.6 dB Gain at 1 GHz • 3.7 dB NF at 1 GHz
MSA-2085
MSA-2086
• Surface Mount Plastic Microstrip Package • 3 dB Bandwidth: DC to 1.1 GHz • 16.6 dB Gain at 1 GHz • 3.7 dB NF at 1 GHz
MSA-2086
2
Absolute Maximum Ratings[1]
Parameter Device Current Power Dissipation[2,3] MSA2011 50 mA 250 mW[3a] MSA2035 60 mA 325 mW[3b] MSA2085, -2086 60 mA 325 mW[3c]
Typical Biasing Configuration
R bias VCC ≥ 7 V
4 DC BLOCK INPUT 1 MSA 2 3 Vd = 5 V
RF CHOKE
OUTPUT
RF Input Power Junction Temperature Storage Temperature Thermal Resistance: θjc
+13 dBm 150°C -65 to 150°C 500°C/W
+13 dBm 200°C -65 to 200°C 155°C/W
+13 dBm 150°C -65 to 150°C 115°C/W
R bias = VCC – V d Id
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3a. Derate at 2.0 mW/°C for TC > 25°C. b. Derate at 6.5 mW/°C for TC > 149°C. c. Derate at 8.7 mW/°C for TC > 112°C.
Electrical Specifications, TA = 25°C
ID = 32 mA, Zo = 50 Ω
MSA-2011 Symbol GP Parameters and Test Conditions Power Gain (|S21|2) f = 0.1 GHz f = 0.5 GHz f = 1.0 GHz Gain Flatness f = 0.1 to 0.6 GHz 3 dB Bandwidth Input VSWR f = 0.1 to 3.0 GHz Output VSWR f = 0.1 to 3.0 GHz P1dB Power Output @ 1 dB Gain Compression: f = 1.0 GHz 50 Ω Noise Figure f = 1.0 GHz Third Order Intercept Point f = 1.0 GHz Group Delay f = 1.0 GHz Device Voltage TC = 25°C Device Voltage Temperature Coefficient Units Min. Typ. Max. Min. MSA-2035 Typ. Max. MSA-2085, -2086 Min. Typ. Max.
dB 15.0 dB GHz
18.9 18.1 16.2 ± 0.6 1.0 1.3:1 1.4:1
17.8
19.2 18.7 17.3 ± 0.4 1.1 1.3:1 1.4:1
19.8 15.0 ± 1.0
19.2 18.3 16.6 ± 0.6 1.1 1.2:1 1.5:1
∆GP f3dB VSWR
dBm dB
9.0 4.3
9.5 3.7
9.0 3.7
NF IP3
dBm psec V mV/°C 4.0
22 143 5.0 -9.3 6.0 4.5
22 143 5.0 -9.3 5.5 4.3
22 143 5.0 -9.3.