Power MOSFET
HiPerFETTM Power MOSFETs
IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
N-Channel Enhancement Mode
High dv/dt, Low...
Description
HiPerFETTM Power MOSFETs
IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family OBSOLETE:
IXFM21N50
IXFM24N50
Symbol
Test Conditions
Maximum Ratings
VDSS ID25 RDS(on)
500 V 21 A 0.25 Ω 500 V 24 A 0.23 Ω 500 V 26 A 0.20 Ω
t rr
≤
250
ns
TO-247 AD (IXFH)
VDSS VDGR VGS V
GSM
ID25
IDM
IAR
EAR dv/dt
PD T
J
TJM T
stg
TL Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient
500
V
500
V
±20
V
±30
V
TC = 25°C
21N50
21
A
24N50
24
A
26N50
26
A
TC = 25°C, pulse width limited by TJM 21N50
84
A
24N50
96
A
26N50
104
A
TC = 25°C
21N50
21
A
24N50
24
A
26N50
26
A
TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
30
mJ
5 V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.6 mm (0.062 in.) from case for 10 s
300
°C
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
TO-268 (D3) Case Style
(TAB)
G S
TO-204 AE (IXFM)
OBSOLETE PACKAGE TYPE
G D
G = Gate, S = Source,
D = Drain, TAB = Drain
(TAB)
Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS)
rated Low package inductance
- easy to drive and to protect Fast intrinsic Rectifier
Symbol
VDSS VGS(th) IGSS IDSS
Test Conditions
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V
Characteristic Values
(TJ...
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