KM23S32000E

KM23V32000D(E)TY/KM23S32000D(E)TY 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.) 2.5V Operation : 150ns(Max.) Supply voltage KM23V32000D(E)TY : single +3.0V/ single +3.3V KM23S32000D(E)TY : single +2.5V Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.) Fully static operation All inputs and outputs TTL compatible Three state outputs Package -. KM23V(S)32000D(E)TY : 48-TSOP1-1218 CMOS MASK ROM GENERAL DESCRIPTION The KM23V32000D(E)TY and KM23S32000D(E)TY are fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 4,194,304 x8 bit(byte mode) or as 2,097,152x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with low power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The KM23V32000D(E)TY and KM23S32000D(E)TY are packaged in a 48-TSOP1. FUNCTIONAL BLOCK DIAGRAM A20 . . . . . . . . A0 A-1 X BUFFERS AND DECODER MEMORY CELL MATRIX (2,097,152x16/ 4,194,304x8) Y BUFFERS AND DECODER CE OE BHE CONTROL LOGIC w w w .D SENSE AMP. DATA OUT t a . . . S a e h t e U 4 .c m o Pin Name A0 - A20 ...