Document
m o .c U 4 t e e h S a at Applications Frequency Synchronous Buck .D High Converters for Computer Processor Power w w High Frequency Isolated DC-DC w Converters with Synchronous Rectification
l l l
PD - 95443A
IRFR3707ZPbF IRFU3707ZPbF
HEXFET® Power MOSFET
for Telecom and Industrial Use Lead-Free
Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current
Absolute Maximum Ratings
VDS VGS
ID @ TC = 25°C IDM
ID @ TC = 100°C PD @TC = 25°C
PD @TC = 100°C TJ TSTG
Thermal Resistance
RθJC RθJA RθJA
m o .c U 4 t e e h S a t a .D w w w
30V 9.5m:
D-Pak IRFR3707Z
Parameter Max.
30 ± 20 Drain-to-Source Voltage Gate-to-Source Voltage V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 56 39
VDSS RDS(on) max
Qg
9.6nC
I-Pak IRFU3707Z
Units
f f
A
220 50 25
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and
W
0.33
-55 to + 175
W/°C °C
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Parameter
Typ.
––– ––– –––
Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient
gÃ
Notes through
are on page 11
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m o .c U 4 t e e h S a 1 at .D w w w
Max.
3.0 50
Units
°C/W
110
12/6/04
IRFR/U3707ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 71 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.023 7.5 10 1.80 -5.0 ––– ––– ––– ––– ––– 9.6 2.6 0.90 3.5 2.6 4.4 5.8 8.0 11 12 3.3 1150 260 120 ––– ––– 9.5 12.5 2.25 ––– 1.0 150 100 -100 ––– 14 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 15V ns nC nC VDS = 15V VGS = 4.5V ID = 12A S nA V mV/°C µA V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A
e e
VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 12A
See Fig. 16 VDS = 15V, VGS = 0V VDD = 16V, VGS = 4.5V ID = 12A Clamped Inductive Load
e
ƒ = 1.0MHz
Avalanche Characteristics
EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current
Ã
d
Typ. ––– ––– –––
Max. 42 12 5.0
Units mJ A mJ
Repetitive Avalanche Energy
––– ––– ––– ––– ––– ––– ––– ––– 25 17
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
Min. Typ. Max. Units
56
f
Conditions
MOSFET symbol
D
A 220 1.0 38 26 V ns nC
Ã
showing the integral reverse
G S
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V TJ = 25°C, IF = 12A, VDD = 15V di/dt = 100A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR/U3707ZPbF
10000
TOP
1000
VGS 10V 6.0V 4.5V 4.0V 3.3V 2.8V 2.5V 2.2V
TOP VGS 10V 6.0V 4.5V 4.0V 3.3V 2.8V 2.5V 2.2V
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
100
BOTTOM
10 1 0.1
10
2.2V
1
2.2V
0.01 0.001 0.1 1 10
20µs PULSE WIDTH Tj = 25°C
0.1 0.1
20µs PULSE WIDTH Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (Α)
100
ID = 30A VGS = 10V
T J = 175°C
1.5
10
1
1.0
0.1
TJ = 25°C VDS = 10V 20µs PULSE WIDTH
0.01 0 2 4 6 8
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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3
IRFR/U3707ZPbF
10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
6.0 ID= 12A
VGS, Gate-to-Source Voltage (V)
5.0
VDS= 24V VDS= 15V
C, Capacitance(pF)
4.0
1000
Ciss
3.0
Coss
2.0
1.0
Crss
100 1 10 100
0.0 0 2 4 6 8 10 12
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.00
1000 OPERATION IN THIS AREA LIMITED BY R.