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IRFU3707ZPBF Dataheets PDF



Part Number IRFU3707ZPBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFU3707ZPBF DatasheetIRFU3707ZPBF Datasheet (PDF)

m o .c U 4 t e e h S a at Applications Frequency Synchronous Buck .D High Converters for Computer Processor Power w w High Frequency Isolated DC-DC w Converters with Synchronous Rectification l l l PD - 95443A IRFR3707ZPbF IRFU3707ZPbF HEXFET® Power MOSFET for Telecom and Industrial Use Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings VDS VGS ID @ TC = 25°C IDM ID @ TC = 100°C PD @TC =.

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m o .c U 4 t e e h S a at Applications Frequency Synchronous Buck .D High Converters for Computer Processor Power w w High Frequency Isolated DC-DC w Converters with Synchronous Rectification l l l PD - 95443A IRFR3707ZPbF IRFU3707ZPbF HEXFET® Power MOSFET for Telecom and Industrial Use Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings VDS VGS ID @ TC = 25°C IDM ID @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Thermal Resistance RθJC RθJA RθJA m o .c U 4 t e e h S a t a .D w w w 30V 9.5m: D-Pak IRFR3707Z Parameter Max. 30 ± 20 Drain-to-Source Voltage Gate-to-Source Voltage V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 56 39 VDSS RDS(on) max Qg 9.6nC I-Pak IRFU3707Z Units ™ f f A 220 50 25 Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and W 0.33 -55 to + 175 W/°C °C Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Parameter Typ. ––– ––– ––– Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient gà Notes  through … are on page 11 www.irf.com m o .c U 4 t e e h S a 1 at .D w w w Max. 3.0 50 Units °C/W 110 12/6/04 IRFR/U3707ZPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 71 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.023 7.5 10 1.80 -5.0 ––– ––– ––– ––– ––– 9.6 2.6 0.90 3.5 2.6 4.4 5.8 8.0 11 12 3.3 1150 260 120 ––– ––– 9.5 12.5 2.25 ––– 1.0 150 100 -100 ––– 14 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 15V ns nC nC VDS = 15V VGS = 4.5V ID = 12A S nA V mV/°C µA V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A e e VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 12A See Fig. 16 VDS = 15V, VGS = 0V VDD = 16V, VGS = 4.5V ID = 12A Clamped Inductive Load e ƒ = 1.0MHz Avalanche Characteristics EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Ù d Typ. ––– ––– ––– Max. 42 12 5.0 Units mJ A mJ Repetitive Avalanche Energy ™ ––– ––– ––– ––– ––– ––– ––– ––– 25 17 Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units 56 f Conditions MOSFET symbol D A 220 1.0 38 26 V ns nC Ù showing the integral reverse G S Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V TJ = 25°C, IF = 12A, VDD = 15V di/dt = 100A/µs e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFR/U3707ZPbF 10000 TOP 1000 VGS 10V 6.0V 4.5V 4.0V 3.3V 2.8V 2.5V 2.2V TOP VGS 10V 6.0V 4.5V 4.0V 3.3V 2.8V 2.5V 2.2V 1000 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 BOTTOM 100 BOTTOM 10 1 0.1 10 2.2V 1 2.2V 0.01 0.001 0.1 1 10 20µs PULSE WIDTH Tj = 25°C 0.1 0.1 20µs PULSE WIDTH Tj = 175°C 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (Α) 100 ID = 30A VGS = 10V T J = 175°C 1.5 10 1 1.0 0.1 TJ = 25°C VDS = 10V 20µs PULSE WIDTH 0.01 0 2 4 6 8 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRFR/U3707ZPbF 10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 6.0 ID= 12A VGS, Gate-to-Source Voltage (V) 5.0 VDS= 24V VDS= 15V C, Capacitance(pF) 4.0 1000 Ciss 3.0 Coss 2.0 1.0 Crss 100 1 10 100 0.0 0 2 4 6 8 10 12 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.00 1000 OPERATION IN THIS AREA LIMITED BY R.


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