IRFR3707ZPBF

m o .c U 4 t e e h S a at Applications Frequency Synchronous Buck .D High Converters for Computer Processor Power w w High Frequency Isolated DC-DC w Converters with Synchronous Rectification l l l PD - 95443A IRFR3707ZPbF IRFU3707ZPbF HEXFET® Power MOSFET for Telecom and Industrial Use Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings VDS VGS ID @ TC = 25°C IDM ID @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Thermal Resistance RθJC RθJA RθJA m o .c U 4 t e e h S a t a .D w w w 30V 9.5m: D-Pak IRFR3707Z Parameter Max. 30 ± 20 Drain-to-Source Voltage Gate-to-Source Voltage V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 56 39 VDSS RDS(on) max Qg 9.6nC I-Pak IRFU3707Z Units ™ f f A 220 50 25 Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and W 0.33 -55 to + 175 W/°C °C Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Parameter Typ. ––– ––– ––– Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient gà Notes  through … are on page 11 www.irf.com m o .c U 4 t e e h S a 1 at .D w w w Max. 3.0 50 Units °C/W 110 12/6/04 IRFR/U3707ZPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(o...