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STP50N06 STP50N06FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
R DS(on...
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STP50N06 STP50N06FI
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTOR
R DS(on) < 0.028 Ω < 0.028 Ω ID 50 A 27 A
TYPE
VDSS 60 V 60 V
STP50N06 STP50N06FI
s s s s s s s s
TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
3
TO-220
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s
REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS V DGR V GS ID ID I DM ( ) P tot V ISO T stg Tj
Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
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Parameter
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INTERNAL SCHEMATIC DIAGRAM
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3 2
ISOWATT220
Value STP50N06 60 60 ± 20 50 35 200 150 1 -65 to 175 175 27 19 200 45 0.3 2000 STP50N06FI
Unit
V V V A A A
() Pulse width limited by safe operating area
July 1993
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STP50N06/FI
THERMAL DATA
TO-220 R thj-case R thj-amb R ...
