VHG601

w w a D . w S a t e e h U 4 t m o .c Hall-Elements w w w t a .D S a e h U 4 t e .c m o Features Applications RCJ-94M-31C w w w .D a S a t e e h U 4 t m o .c Hall-Elements Specifications MINI MOLD Item Maximum control current (Voltage) Maximum power dissipation Storage temperature range Operating temperature range Symbol VHE212(InSb) Absolute maximum ratings VHG411(GaAs) Ic.max. 20mA (12V) (Vc max.) Ta=25¡C PD — 150mW Tstg -40~+125¡C -55~+150¡C Top -20~+110¡C -55~+125¡C Electoric characteristics 168~370mV 23~33mV VH (Vc=1V,B=0.05T) (Vc=1V,B=0.1T) Vo Within–7mV Within–15% (Vc=1V,B=0T) (Vc=1V,B=0T) Rio 240~550 400~700 Roo 210~630 ~2000 -2%/¡C max.-0.05%/¡C (Ic=1mA,-20~+80¡C) (-40~+80¡C) -2.4%/¡C max.0.3%/¡C (Ic=1mA,-20~+80¡C) (-40~+80¡C) — 2%(0~+0.8T) SUPER MINI MOLD VHE701(InSb) 15mA Ta=25¡C — -40~+110¡C -20~+100¡C 41~105mV (Vc=1V,B=0.1T) Within–7mV (Vc=1V,B=0T) 240~550 210~630 -2%/¡C (Ic=1mA,-20~+80¡C) -2.4%/¡C (Ic=1mA,-20~+80¡C) — VHG601(GaAs) 10mA Ta=25¡C 100mW -55~+150¡C -55~+125¡C 23~35mV (Vc=1V,B=0.1T) Within–15% (Vc=1V,B=0T) 450~900 ~3000 max.-0.05%/¡C (-40~+80¡C) max.0.3%/¡C (-40~+80¡C) 2%(0~+0.8T) 912 VHE912(InSb) 20mA Ta=25¡C — -40~+125¡C -20~+110¡C 196~320mV (Vc=1V,B=0.05T) Within–7mV (Vc=1V,B=0T) 240~450 240~450 -2%/¡C (Ic=1mA,-20~+80¡C) -2.4%/¡C (Ic=1mA,-20~+80¡C) — Hall voltage Residual Voltage Input resistance Output resistance Temperature cofficient of VH Temperature cofficient of Rio,Roo Linearity of VH 2.8±0.2 1.5 0.4 2.5±0.2...